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2SK2614 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOSV) 2 2SK2614 5.2 0.2 1.7 0.2 Chopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.032 (typ.) : |Yfs| = 13 S (typ.) 0.95 MAX. 0.6 0.15 Unit: mm 6.8 MAX. 0.6 MAX. : Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 50 50 20 20 50 40 150 -55 to 150 Unit V V V A A W C C 1. 2. 12.0 MIN. : IDSS = 100 A (max) (VDS = 50 V) 5.5 0.2 2.3 2.3 1.1 0.2 0.6 MAX. 1 2 3 2.5 MAX. 2 1 GATE DRAIN HEAT SINK 3. SOURSE 3 Pulse (Note 1) JEDEC JEITA TOSHIBA SC-64 2-7B5B Drain power dissipation (Tc = 25C) Channel temperature Storage temperature range Weight: 0.36 g (typ.) 1.7 0.2 6.8 MAX. 5.2 0.2 Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 0.6 MAX. 5.5 0.2 0.6 0.15 0.95 MAX. 0.6 0.15 2.3 2.3 1 2 3 9.6 0.3 0.6 MAX. 2.5 MAX. Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 125 Unit C / W C / W 0.1 0.1 1.1 0.2 Thermal Characteristics 1. 2. 2.3 2.3 2 1 GATE DRAIN HEAT SINK 3. SOURSE 3 This transistor is an electrostatic-sensitive device. Handle with care. JEDEC JEITA TOSHIBA 2-7B7B Weight: 0.36 g (typ.) 1 2009-12-21 1.5 0.2 2SK2614 Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf VGS 10 V 0V 4.7 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 50 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 5 A VGS = 10 V, ID = 10 A VDS = 10 V, ID = 10 A Min -- -- 50 0.8 -- -- 7 -- -- -- -- VOUT -- 25 -- ns -- 30 -- Typ. -- -- -- -- 0.055 0.032 13 900 130 370 15 Max 10 100 -- 2.0 0.08 0.046 -- -- -- -- -- pF Unit A A V V S ID = 10 A RL = 3 Turn-on time Switching time Fall time VDD 30 V Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("Miller") charge toff -- Duty 1%, tw = 10 s -- VDD 40 V, VGS = 10 V, ID = 20 A -- -- 25 19 6 -- -- -- nC 100 -- Qg Qgs Qgd Source-Drain Ratings and Characteristics (Ta = 25C) Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition -- -- IDR = 20 A, VGS = 0 V IDR = 20 A, VGS = 0 V, dIDR / dt = 50 A / s Min -- -- -- -- -- Typ. -- -- -- 60 45 Max 20 50 -1.7 -- -- Unit A A V ns C Marking Note 3 : A line under a Lot No. identifies the indication of product Labels [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] K2614 Part No. (or abbreviation code) Lot No. Note 3 Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-12-21 2SK2614 ID - VDS 20 Common source Tc = 25C Pulse test 50 8 10 15 6 5 40 10 15 8 6 ID - VDS Common source Tc = 25C Pulse test 5 16 (A) ID 12 3.5 ID (A) 30 4 4.5 Drain current Drain current 8 VGS = 3 V 4 20 4 3.5 10 VGS = 3 V 0 0 0.2 0.4 0.6 0.8 1.0 0 0 2 4 6 8 10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS 50 Common source 40 VDS = 10 V Pulse test 25 30 Tc = -55C 100 2.0 VDS - VGS Common source Tc = 25C Pulse test (V) VDS Drain-source voltage 1.6 ID (A) 1.2 ID = 25 A Drain current 20 0.8 10 0.4 12 6 0 0 2 4 6 8 10 0 0 4 8 12 16 20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 Common source VDS = 10 V 50 Pulse test 0.5 1 Common source Tc = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs (S) 30 Tc = -55C 25 100 10 Drain-source ON-resistance RDS (ON) () 0.3 0.1 VGS = 4 V 10 5 3 0.05 0.03 1 1 3 5 10 30 50 100 0.01 1 3 5 10 30 50 100 Drain current ID (A) Drain current ID (A) 3 2009-12-21 2SK2614 RDS (ON) - Tc 0.20 Common source Pulse test 100 Common source Tc = 25C Pulse test IDR - VDS Drain-source ON-resistance RDS (ON) () 0.16 Drain reverse current IDR (A) 50 30 0.12 10 10 5 3 5 3 VGS = 0, -1 V 1 ID = 12 A 6 0.08 VGS = 4 V 0.04 VGS = 10 V 0 -80 -40 0 40 80 ID = 25 A 6 12 120 160 1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 1.6 2.0 Vth - Tc (pF) 500 Gate threshold voltage Vth (V) 1000 Ciss Capacitance C 1.2 300 Coss 100 50 Common source V =0V 30 GS f = 1 MHz Ta = 25C 10 0.1 0.3 1 3 10 0.8 Crss 0.4 30 100 0 -80 Common source VDS = 10 V ID = 1 mA Pulse test -40 0 40 80 120 160 Drain-source voltage VDS (V) Case temperature Tc (C) PD - Tc 50 50 Dynamic input / output characteristics 20 (V) 40 40 16 Drain power dissipation PD (W) Drain-source voltage Common source ID = 20 A VDD = 40 V Ta = 25C Pulse test 4 8 VGS 20 20 10 10 0 0 40 80 120 160 200 0 0 10 20 30 40 0 50 Case temperature Tc (C) Total gate charge Qg (nC) 4 2009-12-21 Gate-source voltage 30 30 VDS 20 10 12 VGS (V) VDS 2SK2614 Normalized transient thermal impedance rth (t)/Rth (ch-a) SINGLE PULSE Pulse width tw (s) SAFE OPERATING AREA 300 100 (A) 50 ID max (pulse)* 100 s* 30 ID max (continuous) 1 ms* 10 5 3 DC OPERATION Ta =25C Drain current ID 1 0.5 0.3 * Single pulse Tc=25C Curves must be derated linearly with increase in temperature. VDSS max 10 30 100 300 0.1 0.3 1 3 Drain-source voltage VDS (V) 5 2009-12-21 2SK2614 RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2009-12-21 |
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